1/4 STPS16L40CT august 2002 - ed : 5b low drop power schottky rectifier ? dual center tap schottky barrier rectifier designed for high frequency switched mode power supplies and high frequency dc to dc converters. packaged in to-220ab this device is intended for use in low voltage, high frequency converters, free-wheeling and polarity protection applications. description n low forward voltage drop for less power dissipation n negligible switching losses allowing high frequency operation n avalanche rated features and benefits symbol parameter value unit v rrm repetitive peak reverse voltage 40 v i f(rms) rms forward current 30 a i f(av) average forward current tc = 140c per diode 8a d = 0.5 per device 16 a i fsm surge non repetitive forward current tp = 10 ms sinusoidal 180 a i rrm repetitive peak reverse current tp=2 m s square f=1khz 1a i rsm non repetitive peak reverse current tp = 100 m s square 2a t stg storage temperature range - 65 to + 150 c tj maximum operating junction temperature * 150 c dv/dt critical rate of rise of reverse voltage 10000 v/ m s absolute ratings (limiting values, per diode) i f(av) 2x8a v rrm 40 v tj (max) 150 c v f (max) 0.45 v main products characteristics a1 a2 k to-220ab a1 k a2 *: dptot dtj rth j a < - 1 () thermal runaway condition for a diode on its own heatsink
STPS16L40CT 2/4 symbol parameter tests conditions min. typ. max. unit i r * reverse leakage cur- rent tj = 25c v r =v rrm 0.7 ma tj = 100c 15 35 ma v f * forward voltage drop tj = 25 ci f =8a 0.5 v tj = 125c i f =8a 0.39 0.45 tj=25 ci f =16a 0.63 tj = 125c i f =16a 0.55 0.64 pulse test : * tp = 380 m s, d <2% to evaluate the conduction losses use the following equation : p=0.26xi f(av) + 0.024 i f 2 (rms) static electrical characteristics (per diode) symbol parameter value unit r th(j-c) junction to case per diode total 2.2 1.3 c/w r th(c) coupling 0.3 thermal resistances 012345678910 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 if(av) (a) pf(av)(w) t d =tp/t tp d = 1 d = 0.5 d = 0.2 d = 0.1 d = 0.05 fig. 1: average forward power dissipation versus average forward current (per diode). 0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8 9 if(av)(a) rth(j-a)=15c/w rth(j-a)=rth(j-c) tamb(c) t d =tp/t tp fig. 2: average current versus ambient temperature ( d = 0.5) (per diode). when the diodes 1 and 2 are used simultaneously : d tj(diode 1) = p(diode1) x r th(j-c) (per diode) + p(diode 2) x r th(c)
STPS16L40CT 3/4 1e-3 1e-2 1e-1 1e+0 0 20 40 60 80 100 120 im(a) tc=75c tc=25c tc=125c t(s) i m t d =0.5 fig. 3: non repetitive surge peak forward current versus overload duration (maximum values) (per diode). 1e-4 1e-3 1e-2 1e-1 1e+0 0.0 0.2 0.4 0.6 0.8 1.0 tp(s) zth(j-c)/rth(j-c) d = 0.1 d = 0.2 d = 0.5 single pulse t d =tp/t tp fig. 4: relative variation of thermal impedance junction to case versus pulse duration . 0 5 10 15 20 25 30 35 40 1e-2 1e-1 1e+0 1e+1 1e+2 2e+2 ir(ma) tj=125c tj=75c tj=25c tj=150c vr(v) fig. 5: reverse leakage current versus reverse voltage applied (typical values) (per diode). 12 51020 50 100 200 500 1000 2000 vr(v) c(pf) f=1mhz tj=25c fig. 6: junction capacitance versus reverse voltage applied (typical values) (per diode). 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.1 1.0 10.0 100.0 ifm(a) typical values tj=150c tj=125c tj=25c tj=75c vfm(v) fig. 7: forward voltage drop versus forward current (maximum values) (per diode).
STPS16L40CT 4/4 m h2 l2 a c l4 f1(x2) d f2 f g l9 l6 l7 l5 g1 e dia optional ref. dimensions millimeters inches min. max. min. max. a 4.30 4.60 0.169 0.181 c 1.22 1.32 0.048 0.052 d 2.40 2.72 0.094 0.107 e 0.33 0.70 0.013 0.028 f 0.61 0.93 0.024 0.037 f1 1.14 1.70 0.045 0.067 f2 1.14 1.70 0.045 0.067 g 4.95 5.15 0.195 0.202 g1 2.40 2.70 0.094 0.106 h2 10.00 10.40 0.394 0.409 l2 16.00 typ. 0.630 typ. l4 13.00 14.00 0.512 0.551 l5 2.65 2.95 0.104 0.116 l6 14.80 15.75 0.583 0.620 l7 6.20 6.60 0.244 0.260 l9 3.40 3.94 0.134 0.155 m 2.60 typ. 0.102 typ. dia. 3.75 3.89 0.148 0.153 package mechanical data to-220ab information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap- proval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics ? 2002 stmicroelectronics - printed in italy - all rights reserved. stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany hong kong - india - israel - italy - japan - malaysia - malta - morocco - singapore spain - sweden - switzerland - united kingdom - united states. http://www.st.com ordering type marking package weight base qty delivery mode STPS16L40CT STPS16L40CT to-220ab 2g 50 tube n epoxy meets ul94,v0 n cooling method : c n recommended torque value : 0.55 m.n n maximum torque value : 0.70 m.n
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